Academy of Finland  
Funding decision
Organisation University of Turku
Project title Elimination of contact losses in semiconductors through atomic-scale interface research and engineering
Applicant / Contact person Laukkanen, Pekka
Decision No. 338973
Decision date 03.06.2021
Funding period 01.09.2021 - 31.08.2025
Funding 443 875
Project description
Goal of this consortium project is to get a breakthrough in atomic-scale understanding and engineering of metal-semiconductor interfaces which are a limiting part of current devices like transistor and LED, and reduce devices efficiency. Due to reactivity of surfaces (e.g. silicon surfaces) with processing conditions, the surfaces have different properties from bulk crystals and high densities of material defects which degrade electrical properties. Another problem is how to get intense signal from embedded Si device interfaces with atomic identification. To reach the main objectives: (i) correlations between electrical properties and atomic and electronic structures of interfaces; (ii) controlled ways to decrease contact losses in devices, we bridge in pioneering way surface-science and semiconductor technology expertises of two groups. Recent results of the groups: new crystalline oxidized surfaces and nanostructured device surfaces provide an exceptional basis for the project.