| Project description |
| We will develop innovative experimental methods that will allow for simultaneous determination of the identity and function of charge trapping atomic-scale structures in crystalline solids for future technologies. The power of these new tools will be demonstrated by applying them to thin films and device structures based on nitrides, novel transparent semiconducting oxides, diamond, and silicon carbide. The challenging developments leading to transient positron microscopy will enable major breakthroughs in understanding of the physics of charge localization phenomena in semiconductors and insulators, and will open new horizons and opportunities to the science & technology of future electronics. |